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HANBit
HMFN16M16M8G
FLASH-ROM MODULE 32MByte (16M x 16-Bit) Part No. HMFN16M16M8G GENERAL DESCRIPTION
The HMFN16M16M8G is a high-speed NAND flash read only memory (FROM) module containing 16,777,216 words organized in a x16bit configuration. The module consists of eight 4M x 8 FROM mounted on a 72 -pin, double-sided, FR4printed circuit board. Data in the page can be read out at 50ns-cycle time per byte. HMFN16M16M8G extended reliability of 1,000,000 program/erase cycles by providing either ECC (Error Correction Code) or real time mapping out algorithm. HMF16M16M8G is has address multiplexed into 16 I/O's . Command, address and data are all written through I/O's by bringing /WE to low while /CE is low. Data is latched on th e rising edge of /WE. Command Latch Enable (CLE) and address Latch Enable (ALE) are used to multiplex comma nd and address respectively, via the I/O pins.
FEATURES
w High-density 32MByte design w Single + 5V 0.5V power supply w Command/Address/Data Multiplexed I/O port w Organization - Memory Cell Array: (4M+128K)bit x 8bit - Data Register : (512+16)bit x 8bit w Automatic Program and Erase - Page Program: (512+16)Byte - Block Erase: (8K+256)Byte - Status Register w Fast Write Cycle Time - Program time : 250us(typ.) - Block Erase time : 2ms(typ.) w FR4-PCB design w Low profile 72-pin SIMM w Minimum 1,000,000 write/erase cycle PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 w Packages 72-pin SIMM M 22 23 24 SYMBOL Vss I / O0 I / O1 I / O2 I / O3 I / O4 I / O5 I / O6 I / O7 Vcc /CE0 /CE0 NC /CE1 NC NC /WEH NC CLE NC NC /WP NC RB2
PIN ASSIGNMENT
PIN 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 SYMBOL RB3 NC NC NC NC Vcc NC Vss NC NC /RE NC NC NC Vss /SE NC RB0 RB1 NC NC Vcc NC /CE2 72-PIN SIMM TOP VIEW PIN 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 SYMBOL /CE3 /CE3 NC NC /WEL NC ALE NC NC NC Vcc NC NC NC I / O8 I / O9 I / O10 I / O11 I / O12 I / O13 I / O14 I / O15 NC Vss
OPTIONS
MARKING
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HANBit Electronics Co., Ltd.
HANBit
HMFN16M16M8G
FUNCTIONAL BLOCK DIAGRAM
I/O(0-15) RB3 RB2 RB1 RB0 /SE /RE I/O(0-7) CLE ALE /WP /CE0 I/O(0-7) CLE ALE /WEL /WP /CE1 I/O(0-7) CLE ALE /WEL /WP /CE2 I/O(0-7) CLE ALE /WEL /WP /CE3 /CE3 /RE /SE RB3 I/O(8-15) CLE ALE /WEH /WP /CE3 /RE /SE RB3 /CE2 /RE /SE RB2 I/O(8-15) CLE ALE /WEH /WP /CE2 /RE /SE RB2 /CE1 /RE /SE RB1 I/O(8-15) CLE ALE /WEH /WP /CE1 /RE /SE RB1 CLE ALE /WEL /WP /CE0 /RE /SE RB0 I/O(8-15) CLE ALE /WEH /WP /CE0 /RE /SE RB0
U1
U5
U2
U6
U3
U7
U4
U8
/WEL /WEH
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ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage on any pin relative to Vss Temperature Under Bias Storage Temperature Short Circuit Output Current SYMBOL VIN TBIAS TSTG IOS RATING
HMFN16M16M8G
UNIT V
O O
-0.6 to +7.0 -10 to +125 -65 to +150 5
C C
mA
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage reference to Vss, TA=0 to 70OC)
PARAMETER Supply Voltage Supply Voltage SYMBOL VCC VSS MIN 4.5V 0 TYP. 5.0V 0 MAX 5.5V 0
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions otherwise noted. )
PARAMETER SYMBO L Sequential Read Command, Address Operation Current Input Data Input Program Erase Stand-by Current (TTL) Stand-by Current (CMOS) Input Leakage Current Output Leakage Current Input High Voltage, All inputs ICC4 ICC6 ICC7 ISB1 ISB2 ILI ILO VIH /CE=VIH,/WP=/SE=0V/Vcc /CE=Vcc-0.2,/WP=/SE=0V/Vcc VIN=0 to 5.5V VOUT= 0 to 5.5V 2.0 15 15 25 10 30 30 40 1 100 10 10 Vcc+0. 5 Input Low Voltage, All inputs Output High Voltage Level Output Low Voltage Level Output Low Current(R/B) VIL VOH VOL IOL(R/B) IOH = -400Ua IOL = 2.1Ma VOL = 0.4V -0.3 2.4 8 10 0.8 0.4 V V V mA mA mA mA mA uA uA uA V ICC1 ICC3 tcycle=50ns tcycle=50ns /CE=VIL,IOUT=0mA 15 15 30 30 mA mA TEST CONDITION MIN TYP MAX UNIT
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HMFN16M16M8G
AC TEST CONDITON (TA=0 to +70OC, Vcc =5V10%, unless otherwise noted.)
PARAMETER Input Pulse Levels Input Rise and Fall Times Input and Output Timinig Levels Output Load VALUE 0.4V to 2.6V 5ns 0.8V and 2.0V 1 TTL Gate and CL=100pF
CAPACITANCE (TA=25OC, Vcc=5V, f=1.0MHZ)
PARAMETER Input/Output Capacitance Input Capacitance SYMBOL CI/O CIN TEST CONDITION VIL=0V VIN=0V MIN MAX 10 10 UNIT pF pF
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE H L H L L L L X X X X ALE L H L H L L L X X X
(1)
/CE L L L L L L L X X X H
/WE
/RE H H H H H
/SE X X X X L/H L/H
(3) (3) (3) (3)
/WP X X H H H X X H H L
(2)
MODE Read Mode Command Input Address Input(3clock) Write Mode Command Input Address Input(3clock) Data Input Sequential Read &Data Output During Read(Busy) During Program(Busy) During Erase(Busy) Write Protect
(2)
H H X X X X H X X X X
L/H L/H X X
X
0V/Vcc
0V/Vcc
Stand-by
Note : 1. X can be VIL or VIH 2. /WP should be biased to CMOS high or CMOS low for standby 3. When /SE is high, spare area is deselected.
PROGRAM/ ERASE CHARACTERISTICS
PARAMETER Program Time Number of Partial Program Cycles in the Same Page Block Erase Time tBERS 2 10 ms SYMBOL tPROG Nop MIN TYP. 0.25 MAX 1.5 10 UNIT ms Cycles
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HMFN16M16M8G
AC TIMING CHARACTERISTICS FOR COMMAND / ADDRESS / DATA INPUT
PARAMETER CLE Set-up Time CLE Hold Time /CE Setup Time /CE Hold Time /WE Pulse Width ALE Setup Time ALE Hold Time Data Setup Time Data Hold Time Write Cycle Time /WE High Hold Time SYMBOL tCLS tCLH tCS tCH tWP tALS tALH tDS tDH tWC tWH MIN 0 10 0 10 25 0 10 20 10 50 15 MAX UNIT ns ns ns ns ns ns ns ns ns ns ns
AC CHARACTERISTICS FOR OPERATION
PARAMETER Data Transfer from Cell to Register ALE to /RE Delay (Read ID) ALE to /RE Delay (Read cycle) /CE to /RE Delay (ID Read) Ready to /RE Low /RE Pulse Width /WE High to Busy Read Cycle Time /RE Access Time /RE High to Output Hi-Z /CE Hith to Output Hi-Z /RE High Hold Time Output Hi-Z to /RE Low Last /RE High to Busy (at sequential read) /CE High to Ready (in case of interception by /CE at read) /CE High Hold Time (at the last serial read) /RE Low to status Output /CE Low to status Output /RE High to /WE Low /WE High to /RE Low Erase Suspend Input to Ready
(1)
SYMBOL tR tAR1 tAR2 tCR tRR tRP tWB tRC tREA tRHZ tCHZ tREH tIR tRB tCRY tCEH tRSTO tCSTO tRHW tWHR tSR
MIN 150 50 100 20 30 50 15 15 0 100 0 60 -
MAX 10 100 35 30 20 100 50+tr(R/B) 35 45 500
(2)
UNIT us ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns us
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/RE access time (Read ID) Device Resetting Time tREADID tRST
HMFN16M16M8G
35 5/10/500/5
OL
ns us
Note: 1. If /CE goes high within 30ns after the rising edge of the last /RE, R//B Will not return to V 2. The time to Ready depends on the value of the pull-up resistor tied R//B pin 3. To break the sequential read cycle, /CE must be held high for longer than t CEH.
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u READ OPERATIONS TIMING
HMFN16M16M8G
u RESET TIMING
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u PROGRAM OPERATIONS TIMING
HMFN16M16M8G
u CHIP/SECTOR ERASE OPERATION TIMINGS
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HMFN16M16M8G
u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
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u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMFN16M16M8G
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
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PACKAGE DIMENSIONS
HMFN16M16M8G
108mm
18.50 mm 7.35 mm 1
72
2.00 mm 1.02 mm 6.35 mm 95.25 mm 1.27 mm 2.74 mm
2.54 mm 0.25 mm MAX MIN
Gold: 1.040.10 mm 1.27 Solder: 0.9140.10 mm
1.290.08 mm
-
(Solder & Gold Plating)
ORDERING INFORMATION
Component Number 8EA
Part Number
Density
Org.
Package
Vcc
Function NAND,Perfect Sector
HMFN16M16M8G
32MByte
16MX 16bit
72 Pin-SIMM
5V
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